annalsoftelecommunications-annalesdestelecommunications，青博盛审稿周期约3个月，分子722，中科院分区4区。
如今直上银河去,同到牵牛织女家
推荐《仪器仪表学报》，EI期刊，以下是该杂志的收录情况，希望有所帮助：《仪器仪表学报》被以下数据库收录：CA 化学文摘(美)(2014)SA 科学文摘(英)(2011)JST 日本科学技术振兴机构数据库(日)(2013)EI 工程索引(美)(2016)CSCD 中国科学引文数据库来源期刊（2017-2018年度）（含扩展版）北京大学《中文核心期刊要目总览》来源期刊：1992年(第一版),1996年(第二版),2000年版,2004年版,2008年版,2011年版,2014年版;
期刊方面的问题可以找【论文部落】了解
你需要发表什么级别的
annalsoftelecommunications-annalesdestelecommunications，青博盛审稿周期约3个月，分子722，中科院分区4区。
具体不清楚你做的是什么水平，我把所有材料的SCI收录期刊都给你，你自己选择一下吧，一般影响因子越高越难发，影响因子水平差不多的发表难度一般来说是基本一致的。另外壹 品 优征稿比较快，你什么用，要提前准备了。
你好！关于这EI、SCI、CSSCI三个，请自行百度。关于一般常用的数据库，请看图。中文和英文的都有，从后面的点击率可以看出用的次数。
google学术搜索
JSSCTCAS
推荐《仪器仪表学报》，EI期刊，以下是该杂志的收录情况，希望有所帮助：《仪器仪表学报》被以下数据库收录：CA 化学文摘(美)(2014)SA 科学文摘(英)(2011)JST 日本科学技术振兴机构数据库(日)(2013)EI 工程索引(美)(2016)CSCD 中国科学引文数据库来源期刊（2017-2018年度）（含扩展版）北京大学《中文核心期刊要目总览》来源期刊：1992年(第一版),1996年(第二版),2000年版,2004年版,2008年版,2011年版,2014年版;
annalsoftelecommunications-annalesdestelecommunications，青博盛审稿周期约3个月，分子722，中科院分区4区。
你好！关于这EI、SCI、CSSCI三个，请自行百度。关于一般常用的数据库，请看图。中文和英文的都有，从后面的点击率可以看出用的次数。
推荐《仪器仪表学报》，EI期刊，以下是该杂志的收录情况，希望有所帮助：《仪器仪表学报》被以下数据库收录：CA 化学文摘(美)(2014)SA 科学文摘(英)(2011)JST 日本科学技术振兴机构数据库(日)(2013)EI 工程索引(美)(2016)CSCD 中国科学引文数据库来源期刊（2017-2018年度）（含扩展版）北京大学《中文核心期刊要目总览》来源期刊：1992年(第一版),1996年(第二版),2000年版,2004年版,2008年版,2011年版,2014年版;
The power semiconductor device and the micro electron power semiconductor device is in the semiconductor device important link, it and the micro electron component relations is close, because the micro electron component required power semiconductor device forms a complete set provides its power source and the execution If develops rapidly computer, when CPU from 286,486, to gallops I, II, III, IV…When development, to took the power source the power semiconductor request increasingly is also For example the present is developing the voltage to be smaller than 1 volt, on the electric current hundred amperes power sources, this must develop the newest MOSFET component to be able to meet the In order to achieve these renew unceasingly the performance index, the power semiconductor device must use the micro electron component similar fine This will also be this article is detailed The power semiconductor device and the integrated circuit close union, in the one has arranged in order four aspects in the chart: Namely 1) power and micro electron component in chip manufacture craft already day by day close: The power MOS component in order to achieve a better performance, for example requests to pass condition the resistance lowly, its craft already from 20 year ago several microns technologies rapidly to submicron even deep submicron This and the micro electron component development is 2) the MOS component seal technology is also approaching to the integrated These for years, the power MOS component has used has inverted (Flip) likely, ball grid array (BGA) and packing forms and so on multi-chip module (MCM)These all are the quite new integrated circuit packing 3) looked from the component structure that, makes the power MOS component and the integrated circuit in the identical chip perhaps the identical packing, is one of recent development Therefore the power semiconductor device equates simply for established separately the component no longer to be Take the IR Corporation product as the example, the power integrated circuit, perhaps and IC does in the same place power component, as well as the special advanced component, held its product one above the 4) the comprehensive solution (Total Solution) is each kind of component finally Seeks the component the function integrity, in the solution application all questions is the component manufacturer's Had the integrated circuit to enter the power semiconductor device, this kind of comprehensive solution plan was easier to Not only to the low power direction is so, even the high efficiency direction is also pursuing a greater integration rate and the comprehensive Certainly, contains all functions by a component not necessarily forever is the preferred For example must consider the rate of finished products the loss, but also must pay attention to the protection customer to develop the electric circuit on own initiative the